UT3401G-AE3-R - Даташиты. Аналоги. Основные параметры
Наименование производителя: UT3401G-AE3-R
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 3.2 ns
Cossⓘ - Выходная емкость: 115 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: SOT23
Аналог (замена) для UT3401G-AE3-R
UT3401G-AE3-R Datasheet (PDF)
ut3401g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp
ut3401.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMappli
ut3401z.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMapp
ut3401zl-ae3-r ut3401zg-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3401Z Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3401Z is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWMa
Другие MOSFET... UT2316G-AE3-R , UT2955G-AA3-R , UT2955L-TN3-R , UT2955G-TN3-R , UT3400L-AE2-R , UT3400G-AE2-R , UT3400L-AE3-R , UT3400G-AE3-R , IRF1010E , UT3401ZL-AE3-R , UT3401ZG-AE3-R , UT3404G-AE3-R , UT3404G-S08-R , UT3N06G-AB3-R , UT3N06G-AE3-R , UT3N06L-TM3-T , UT3N06G-TM3-T .
History: TK9Q65W
History: TK9Q65W
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