FDI8441 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDI8441
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 215 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: TO262 I2PAK

Búsqueda de reemplazo de MOSFET FDI8441

FDI8441 Datasheet (PDF)

..1. Size:458K fairchild semi
fdi8441 f085.pdf

May 2010FDI8441_F085N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.2m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter /

..2. Size:303K fairchild semi
fdi8441.pdf

July 2007tmFDI8441N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.2m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter /

..3. Size:282K inchange semiconductor
fdi8441.pdf

isc N-Channel MOSFET Transistor FDI8441FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose

8.1. Size:307K fairchild semi
fdi8442.pdf

August 2007FDI8442N-Channel PowerTrench MOSFET40V, 80A, 2.9m Features Applications Automotive Engine Control Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repetitiv

8.2. Size:282K inchange semiconductor
fdi8442.pdf

isc N-Channel MOSFET Transistor FDI8442FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose

Otros transistores... FDI038AN06A0 , FDI040N06 , FDI045N10AF102 , STS3409L , FDI150N10 , STS3409 , FDI3632 , STS3406 , IRFB4110 , FDI8441F085 , FDL100N50F , FDM3622 , STS3405 , FDMA0104 , FDMA1023PZ , FDMA1024NZ , FDMA1025P .

Liste

Recientemente añadidas las descripciónes de los transistores: