FDI8441 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDI8441
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0027 Ohm
Тип корпуса: TO262 I2PAK
- подбор MOSFET транзистора по параметрам
FDI8441 Datasheet (PDF)
fdi8441 f085.pdf

May 2010FDI8441_F085N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.2m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter /
fdi8441.pdf

July 2007tmFDI8441N-Channel PowerTrench MOSFET40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.2m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter /
fdi8441.pdf

isc N-Channel MOSFET Transistor FDI8441FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose
fdi8442.pdf

August 2007FDI8442N-Channel PowerTrench MOSFET40V, 80A, 2.9m Features Applications Automotive Engine Control Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repetitiv
Другие MOSFET... FDI038AN06A0 , FDI040N06 , FDI045N10AF102 , STS3409L , FDI150N10 , STS3409 , FDI3632 , STS3406 , IRFB4110 , FDI8441F085 , FDL100N50F , FDM3622 , STS3405 , FDMA0104 , FDMA1023PZ , FDMA1024NZ , FDMA1025P .
History: FDD6676S | MC11N005 | SI7446BDP | JCS5N50CT | NCEP026N10F | NVMFS5C628N | SI7913DN
History: FDD6676S | MC11N005 | SI7446BDP | JCS5N50CT | NCEP026N10F | NVMFS5C628N | SI7913DN



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
bdw94c | bd140 transistor | 2n2222a datasheet | bd136 | tl431 datasheet | 2sd526 | 2n4403 transistor equivalent | 2sc1318