UT9564G-S08-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UT9564G-S08-R
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: SOP8
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UT9564G-S08-R Datasheet (PDF)
ut9564l-tn3-r ut9564g-tn3-r ut9564g-s08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT9564 Power MOSFET -40V, -7.3A P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1TO-252 DESCRIPTION The UTC UT9564 is a P-ch enhancement mode power MOSFETand it uses UTC perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The UTC UT9564 is ideal for applications such as
ut9564.pdf

UNISONIC TECHNOLOGIES CO., LTD UT9564 Power MOSFET -40V, -7.3A P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1TO-252 DESCRIPTION The UTC UT9564 is a P-ch enhancement mode power MOSFET and it uses UTC perfect technology to provide customerswith fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The UTC UT9564 is ideal for applications such as l
Otros transistores... UT9435HL-AE3-R , UT9435HG-AE3-R , UT9435HL-AL6-R , UT9435HG-AG6-R , UT9435HL-S08-R , UT9435HG-S08-R , UT9564L-TN3-R , UT9564G-TN3-R , HY1906P , UTD408L-TN3-R , UTD408G-TN3-R , UTM2054L-AB3-R , UTM2054G-AB3-R , UTM2054L-AE3-R , UTM2054G-AE3-R , UTM4052L-S08-R , UTM4052G-S08-R .
History: AONS66405T | YJD60N02A | IXTH300N04T2 | 2SK4058-ZK-E1-AY | IRLR4343 | YJD50N03A | HM3N10MR
History: AONS66405T | YJD60N02A | IXTH300N04T2 | 2SK4058-ZK-E1-AY | IRLR4343 | YJD50N03A | HM3N10MR



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