UT9564G-S08-R MOSFET. Datasheet pdf. Equivalent
Type Designator: UT9564G-S08-R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 7.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
UT9564G-S08-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT9564G-S08-R Datasheet (PDF)
ut9564l-tn3-r ut9564g-tn3-r ut9564g-s08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT9564 Power MOSFET -40V, -7.3A P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1TO-252 DESCRIPTION The UTC UT9564 is a P-ch enhancement mode power MOSFETand it uses UTC perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The UTC UT9564 is ideal for applications such as
ut9564.pdf
UNISONIC TECHNOLOGIES CO., LTD UT9564 Power MOSFET -40V, -7.3A P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1TO-252 DESCRIPTION The UTC UT9564 is a P-ch enhancement mode power MOSFET and it uses UTC perfect technology to provide customerswith fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The UTC UT9564 is ideal for applications such as l
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