UT9564G-S08-R Datasheet and Replacement
Type Designator: UT9564G-S08-R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 7.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
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UT9564G-S08-R Datasheet (PDF)
ut9564l-tn3-r ut9564g-tn3-r ut9564g-s08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT9564 Power MOSFET -40V, -7.3A P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1TO-252 DESCRIPTION The UTC UT9564 is a P-ch enhancement mode power MOSFETand it uses UTC perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The UTC UT9564 is ideal for applications such as
ut9564.pdf

UNISONIC TECHNOLOGIES CO., LTD UT9564 Power MOSFET -40V, -7.3A P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1TO-252 DESCRIPTION The UTC UT9564 is a P-ch enhancement mode power MOSFET and it uses UTC perfect technology to provide customerswith fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The UTC UT9564 is ideal for applications such as l
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP6679GI-HF | FCPF7N60YDTU | H7N1002LM | ZVN0124ASTOA | SPD04N60S5 | DM12N65C
Keywords - UT9564G-S08-R MOSFET datasheet
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UT9564G-S08-R replacement
History: AP6679GI-HF | FCPF7N60YDTU | H7N1002LM | ZVN0124ASTOA | SPD04N60S5 | DM12N65C



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