UTT18P10L-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTT18P10L-TN3-R
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 18 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 61(max) nC
Tiempo de subida (tr): 73 nS
Conductancia de drenaje-sustrato (Cd): 590 pF
Resistencia entre drenaje y fuente RDS(on): 0.2 Ohm
Paquete / Cubierta: TO252
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UTT18P10L-TN3-R Datasheet (PDF)
utt18p10l-tn3-r utt18p10g-tn3-r utt18p10l-ta3-t utt18p10g-ta3-t.pdf
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UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)
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Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
