UTT18P10L-TN3-R MOSFET. Datasheet pdf. Equivalent
Type Designator: UTT18P10L-TN3-R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 61(max) nC
trⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 590 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO252
UTT18P10L-TN3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UTT18P10L-TN3-R Datasheet (PDF)
utt18p10l-tn3-r utt18p10g-tn3-r utt18p10l-ta3-t utt18p10g-ta3-t.pdf
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UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)
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