UTT18P10G-TN3-R Todos los transistores

 

UTT18P10G-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UTT18P10G-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de UTT18P10G-TN3-R MOSFET

   - Selección ⓘ de transistores por parámetros

 

UTT18P10G-TN3-R Datasheet (PDF)

 0.1. Size:288K  utc
utt18p10l-tn3-r utt18p10g-tn3-r utt18p10l-ta3-t utt18p10g-ta3-t.pdf pdf_icon

UTT18P10G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET usingUTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

 6.1. Size:275K  utc
utt18p10.pdf pdf_icon

UTT18P10G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

 8.1. Size:199K  utc
utt18p06.pdf pdf_icon

UTT18P10G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTT18P06 Power MOSFET 18.3A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

Otros transistores... UTM4953G-S08-R , UTM6016L-TA3-T , UTM6016G-TA3-T , UTM6016L-TN3-R , UTM6016G-TN3-R , UTM6016G-S08-R , UTM6016G-K08-5060-R , UTT18P10L-TN3-R , IRF3710 , UTT18P10L-TA3-T , UTT18P10G-TA3-T , UTT24N06L-TM3-T , UTT24N06G-TM3-T , UTT24N06L-TN3-R , UTT24N06G-TN3-R , UTT25P10L-TA3-T , UTT25P10G-TA3-T .

History: SI7682DP | SSF11NS70UF | GP2M002A060XG | ELM321604A | CS7807

 

 
Back to Top

 


 
.