UTT30P06G-TN3-R Todos los transistores

 

UTT30P06G-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UTT30P06G-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

UTT30P06G-TN3-R Datasheet (PDF)

 0.1. Size:480K  utc
utt30p06l-tq2-t utt30p06g-tq2-t utt30p06l-tq2-r utt30p06g-tq2-r utt30p06l-tn3-r utt30p06g-tn3-r.pdf pdf_icon

UTT30P06G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Power MOSFET -60V, -30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and high speed

 3.1. Size:480K  utc
utt30p06l-ta3-t utt30p06g-ta3-t utt30p06l-tf3-t utt30p06g-tf3-t utt30p06l-tm3-t utt30p06g-tm3-t.pdf pdf_icon

UTT30P06G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Power MOSFET -60V, -30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and high speed

 6.1. Size:132K  utc
utt30p06.pdf pdf_icon

UTT30P06G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Preliminary Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and hi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK2931 | FQPF13N50C

 

 
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