UTT30P06G-TN3-R Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: UTT30P06G-TN3-R
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 89 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 40 nC
trⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 120 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: TO263
UTT30P06G-TN3-R Datasheet (PDF)
utt30p06l-tq2-t utt30p06g-tq2-t utt30p06l-tq2-r utt30p06g-tq2-r utt30p06l-tn3-r utt30p06g-tn3-r.pdf

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utt30p06l-ta3-t utt30p06g-ta3-t utt30p06l-tf3-t utt30p06g-tf3-t utt30p06l-tm3-t utt30p06g-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Power MOSFET -60V, -30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and high speed
utt30p06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Preliminary Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and hi
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