UTT6NP10G-TN4-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UTT6NP10G-TN4-R Datasheet (PDF)

0.1. Size:285K utc
utt6np10l-tn4-r utt6np10g-tn4-r utt6np10l-s08-r utt6np10g-s08-r.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UTT6NP10 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION 1SOP-8The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFETit uses UTCs advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UTT6NP10 is univers

9.1. Size:140K utc
utt6n10.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UTT6N10 Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10 is an N-channel enhancement mode Power FET, it uses UTCs advanced technology to provide customers a 1minimum on-state resistance, high switching speed and ultra low SOT-223gate charge. The UTC UTT6N10 is usually used in DC-DC Conversion. FEATURES

9.2. Size:395K kexin
utt6n10z.pdf pdf_icon

SMD Type MOSFETTransistorsN-Channel Power MOSFETUTT6N10Z Features Unit:mmSOT-2236.500.2 RDS(on) = 80m @VGS = 10V,ID=6A3.000.1 High Switching Speed Low Crss (Typically 3.1pF)4 Low Gate Charge (Typically 4.3nC) 1 2 32.Drain0.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Gate1.Gate 2.Drain3.Source4.60 (typ) 4.Drain3.Sou

Otros transistores... UTT30P06G-TQ2-T , UTT30P06L-TQ2-R , UTT30P06G-TQ2-R , UTT30P06L-TN3-R , UTT30P06G-TN3-R , UTT4850L-S08-R , UTT4850G-S08-R , UTT6NP10L-TN4-R , AON7506 , UTT6NP10L-S08-R , UTT6NP10G-S08-R , 2P302A , 2P308A9 , 2P308B9 , 2P308G9 , 2P308D9 , 2P601A9 .