FDMA1032CZ Datasheet. Equivalente

 ..1. Size:374K  fairchild semi
 fdma1032cz.pdf

May 2010 FDMA1032CZ tm 20V Complementary PowerTrench MOSFET General Description Features Q1 N-Channel This device is designed specifically as a single package 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V solution for a DC/DC 'Switching' MOSFET in cellular RDS(ON) = 86 m @ VGS = 2.5V handset and other ultra-portable applications. It Q2 P-Channel features a

 8.1. Size:321K  fairchild semi
 fdma1028nz.pdf

t October 2010 tm FDMA1028NZ Dual N-Channel PowerTrench MOSFET General Description Features 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m @ VGS = 2.5V solution for dual switching requirements in cellular Low profile 0.8 mm maximum in the new package handset and other ultra-portable

 8.2. Size:402K  fairchild semi
 fdma1024nz.pdf

May 2010 FDMA1024NZ Dual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 m Features General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 A This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 A ultra-portable applications. It features two indepe

 8.3. Size:417K  fairchild semi
 fdma1023pz.pdf

May 2009 FDMA1023PZ tm Dual P-Channel PowerTrench MOSFET 20V, 3.7A, 72m Features General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7A This device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2A and other ultra-portable applications. It features

 8.4. Size:379K  fairchild semi
 fdma1027pt.pdf

May 2009 FDMA1027PT Dual P-Channel PowerTrench MOSFET 20 V, 3 A, 120 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 120 m at VGS = -4.5 V, ID = -3.0 A for the battery charge switch in cellular handset and other Max rDS(on) = 160 m at VGS = -2.5 V, ID = -2.5 A ultra-portable applications. It features tw

 8.5. Size:339K  fairchild semi
 fdma1025p.pdf

May 20 FDMA1025P tm Dual P-Channel PowerTrench MOSFET 20V, 3.1A, 155m Features General Description Max rDS(on) = 155m at VGS = 4.5V, ID = 3.1A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - Max rDS(on) = 220m at VGS = 2.5V, ID = 2.3A portable applications. It feat

 8.6. Size:256K  fairchild semi
 fdma1029pz.pdf

May 2009 tmtm FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maximu

 8.7. Size:423K  fairchild semi
 fdma1027p.pdf

July 2014 FDMA1027P Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two RDS(ON) = 160 m @ VGS = -2.5 V independent P-Channel MOSFETs with low on-state

 8.8. Size:500K  onsemi
 fdma1025p.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.9. Size:123K  onsemi
 fdma1029pz.pdf

May 2006 FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package 3.1 A, 20V. RDS(ON) = 95 m @ VGS = 4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = 2.5V and other ultra-portable applications. It features two Low profile 0.8 mm maxi