FDMA1032CZ PDF and Equivalents Search

 

FDMA1032CZ Specs and Replacement

Type Designator: FDMA1032CZ

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: MICROFET

FDMA1032CZ substitution

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FDMA1032CZ datasheet

 ..1. Size:374K  fairchild semi
fdma1032cz.pdf pdf_icon

FDMA1032CZ

May 2010 FDMA1032CZ tm 20V Complementary PowerTrench MOSFET General Description Features Q1 N-Channel This device is designed specifically as a single package 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V solution for a DC/DC 'Switching' MOSFET in cellular RDS(ON) = 86 m @ VGS = 2.5V handset and other ultra-portable applications. It Q2 P-Channel features a... See More ⇒

 8.1. Size:321K  fairchild semi
fdma1028nz.pdf pdf_icon

FDMA1032CZ

t October 2010 tm FDMA1028NZ Dual N-Channel PowerTrench MOSFET General Description Features 3.7 A, 20V. RDS(ON) = 68 m @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m @ VGS = 2.5V solution for dual switching requirements in cellular Low profile 0.8 mm maximum in the new package handset and other ultra-portable ... See More ⇒

 8.2. Size:402K  fairchild semi
fdma1024nz.pdf pdf_icon

FDMA1032CZ

May 2010 FDMA1024NZ Dual N-Channel PowerTrench MOSFET 20 V, 5.0 A, 54 m Features General Description Max rDS(on) = 54 m at VGS = 4.5 V, ID = 5.0 A This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m at VGS = 2.5 V, ID = 4.2 A ultra-portable applications. It features two indepe... See More ⇒

 8.3. Size:417K  fairchild semi
fdma1023pz.pdf pdf_icon

FDMA1032CZ

May 2009 FDMA1023PZ tm Dual P-Channel PowerTrench MOSFET 20V, 3.7A, 72m Features General Description Max rDS(on) = 72m at VGS = 4.5V, ID = 3.7A This device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m at VGS = 2.5V, ID = 3.2A and other ultra-portable applications. It features... See More ⇒

Detailed specifications: FDMA0104 , FDMA1023PZ , FDMA1024NZ , FDMA1025P , FDMA1027P , FDMA1027PT , FDMA1028NZ , FDMA1029PZ , 2SK3878 , STS3404 , FDMA2002NZ , STS3402 , FDMA291P , FDMA3023PZ , FDMA3028N , STS3401A , FDMA410NZ .

Keywords - FDMA1032CZ MOSFET specs

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