QM3058M6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

QM3058M6 N-Channel 30V Fast Switching MOSFET General Description Product Summary The QM3058M6 is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 3m 140A and gate charge for most of the synchronous buck converter applications . Applications The QM3058M6meet the R

QM3056M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.2 m 30V 103A gate charge for most of the synchronous buck converter applications . Applications The QM3056M6 meet the RoHS and Green Product require

QM3054M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3054M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.8 m 30V 97A gate charge for most of the synchronous buck converter applications . Applications The QM3054M6 meet the RoHS and Green Product requirem