All MOSFET. QM3058M6 Datasheet

 

QM3058M6 Datasheet and Replacement


   Type Designator: QM3058M6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PRPAK5X6
 

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QM3058M6 Datasheet (PDF)

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QM3058M6

QM3058M6 N-Channel 30V Fast Switching MOSFET General Description Product Summary The QM3058M6 is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 3m 140A and gate charge for most of the synchronous buck converter applications . Applications The QM3058M6meet the R

 9.1. Size:403K  1
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QM3058M6

QM3056M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.2 m 30V 103A gate charge for most of the synchronous buck converter applications . Applications The QM3056M6 meet the RoHS and Green Product require

 9.2. Size:400K  1
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QM3058M6

QM3054M6 N-Ch 30V Fast Switching MOSFETs General Description Product Summary The QM3054M6 is the highest performance trench N-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and 4.8 m 30V 97A gate charge for most of the synchronous buck converter applications . Applications The QM3054M6 meet the RoHS and Green Product requirem

Datasheet: KP813B , KP901A , KP901B , KP902A , KP903A , KP903B , KP903V , DN3134KW , IRFB3607 , QM3056M6 , SPP100N08S2L-07 , SPB100N08S2L-07 , CEF02N65D , CEP02N65D , CEB02N65D , HYG055N08NS1P , HYG055N08NS1B .

Keywords - QM3058M6 MOSFET datasheet

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