CEP02N65D Todos los transistores

 

CEP02N65D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEP02N65D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6.9 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de CEP02N65D MOSFET

- Selecciónⓘ de transistores por parámetros

 

CEP02N65D datasheet

 ..1. Size:342K  1
 cef02n65d cep02n65d ceb02n65d.pdf pdf_icon

CEP02N65D

CEP02N65D/CEB02N65D CEF02N65D PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65D 650V 6.9 2A 10V CEB02N65D 650V 6.9 2A 10V CEF02N65D 650V 6.9 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF S

 6.1. Size:391K  cet
 cep02n65a ceb02n65a cef02n65a.pdf pdf_icon

CEP02N65D

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5 1.3A 10V CEB02N65A 650V 10.5 1.3A 10V CEF02N65A 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES C

 6.2. Size:393K  cet
 cep02n65g ceb02n65g cef02n65g.pdf pdf_icon

CEP02N65D

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5 2A 10V CEB02N65G 650V 5.5 2A 10V CEF02N65G 650V 5.5 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(

 7.1. Size:393K  cet
 cep02n6g ceb02n6g cef02n6g.pdf pdf_icon

CEP02N65D

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5 2.2A 10V CEB02N6G 600V 5 2.2A 10V CEF02N6G 600V 5 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK

MOSTRAR MÁS

Otros transistores... KP903B , KP903V , DN3134KW , QM3058M6 , QM3056M6 , SPP100N08S2L-07 , SPB100N08S2L-07 , CEF02N65D , IRF1010E , CEB02N65D , HYG055N08NS1P , HYG055N08NS1B , HY1808AP , HY1808AM , HY1808AB , HY1808APS , HY1808APM .

History: STW9NK90Z

 

 

 

 

↑ Back to Top
.