FDMA3023PZ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMA3023PZ 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 2.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Encapsulados: MICROFET
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FDMA3023PZ datasheet
fdma3023pz.pdf
December 2008 FDMA3023PZ tm Dual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 A for the battery charge switch in cellular handset and other Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 A ultra-portable applications. It featu
fdma3027pz.pdf
June 2012 FDMA3027PZ Dual P-Channel PowerTrench MOSFET -30 V, -3.3 A, 87 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 87 m at VGS = -10 V, ID = -3.3 A for dual switching requirements such as gate driver for larger Max rDS(on) = 152 m at VGS = -4.5 V, ID = -2.3 A Mosfets. It features two independent P-Channel
fdma3028n.pdf
June 2011 FDMA3028N Dual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 68 m at VGS = 4.5 V, ID = 3.8 A for dual switching requirements in cellular handset and other Max rDS(on) = 88 m at VGS = 2.5 V, ID = 3.4 A ultra-portable applications. It features two independe
Otros transistores... FDMA1027PT, FDMA1028NZ, FDMA1029PZ, FDMA1032CZ, STS3404, FDMA2002NZ, STS3402, FDMA291P, 2SK3878, FDMA3028N, STS3401A, FDMA410NZ, FDMA420NZ, FDMA430NZ, STS3401, FDMA507PZ, FDMA510PZ
Parámetros del MOSFET. Cómo se afectan entre sí.
History: FDI038AN06A0 | FDMA2002NZ | FDH5500F085 | STS3409L
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