FDMA3023PZ Datasheet and Replacement
Type Designator: FDMA3023PZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 2.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: MICROFET
FDMA3023PZ substitution
FDMA3023PZ Datasheet (PDF)
fdma3023pz.pdf
December 2008FDMA3023PZtmDual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 Afor the battery charge switch in cellular handset and other Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 Aultra-portable applications. It featu
fdma3027pz.pdf
June 2012FDMA3027PZDual P-Channel PowerTrench MOSFET -30 V, -3.3 A, 87 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 87 m at VGS = -10 V, ID = -3.3 Afor dual switching requirements such as gate driver for larger Max rDS(on) = 152 m at VGS = -4.5 V, ID = -2.3 AMosfets. It features two independent P-Channel
fdma3028n.pdf
June 2011FDMA3028NDual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 68 m at VGS = 4.5 V, ID = 3.8 Afor dual switching requirements in cellular handset and other Max rDS(on) = 88 m at VGS = 2.5 V, ID = 3.4 Aultra-portable applications. It features two independe
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