HY1808AP Todos los transistores

 

HY1808AP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY1808AP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 210 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 84 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 446 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: TO-220

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HY1808AP datasheet

 ..1. Size:6123K  1
hy1808ap hy1808m hy1808b hy1808ps hy1808pm.pdf pdf_icon

HY1808AP

HY1808AP/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description eatures F 80V/84A RDS(ON)=6.2m (typ.) @ VGS=10V S Avalanche Rated D S D G G Reliable and Rugged S D G Lead Free and Green Devices Available TO-263-2L TO-220FB-3L TO-220FB-3S (RoHS Compliant) S D G S D G Applications TO-3PS-3L TO-3PS-3M D Power Management for Inverter Systems. G N-Channe

 9.1. Size:1648K  1
hy1803c2.pdf pdf_icon

HY1808AP

HY1803C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/80A D D D D D D D D RDS(ON)= 2.4m (typ.) @VGS = 10V RDS(ON)= 2.8m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DC N-Channel MOSFET

 9.2. Size:911K  hymexa
hy1804p hy1804b.pdf pdf_icon

HY1808AP

HY1804P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/110A RDS(ON)= 3.6m (typ.)@VGS = 10V RDS(ON)= 4.4m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged S GD Lead Free and Green Devices Available (RoHS Compliant) GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MO

 9.3. Size:1499K  hymexa
hy1804d hy1804v.pdf pdf_icon

HY1808AP

HY1804D/U N-Channel Enhancement Mode MOSFET Features Pin Description 40V/80A, RDS(ON)=4.0 m (typ.) @ VGS=10V RDS(ON)=4.6 m (typ.) @ VGS=4.5 V S S D S D S Avalanche Rated G D G D G G Reliable and Rugged S S D D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Pow

Otros transistores... QM3056M6 , SPP100N08S2L-07 , SPB100N08S2L-07 , CEF02N65D , CEP02N65D , CEB02N65D , HYG055N08NS1P , HYG055N08NS1B , CS150N03A8 , HY1808AM , HY1808AB , HY1808APS , HY1808APM , MDP1991 , NCE8580 , SRC60R090B , AONY36352 .

History: S70N08RP | HM100P03 | 7N60DS

 

 

 

 

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