All MOSFET. HY1808AP Datasheet

 

HY1808AP MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY1808AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 84 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 446 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220

 HY1808AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY1808AP Datasheet (PDF)

 ..1. Size:6123K  1
 hy1808ap hy1808m hy1808b hy1808ps hy1808pm.pdf

HY1808AP HY1808AP

HY1808AP/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptioneaturesF 80V/84ARDS(ON)=6.2m (typ.) @ VGS=10VSAvalanche Rated DSD GGReliable and Rugged SDGLead Free and Green Devices Available TO-263-2L TO-220FB-3L TO-220FB-3S(RoHS Compliant)SDGSDGApplicationsTO-3PS-3L TO-3PS-3MD Power Management for Inverter Systems.G N-Channe

 9.1. Size:1648K  1
 hy1803c2.pdf

HY1808AP HY1808AP

HY1803C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/80AD D D D D D D DRDS(ON)= 2.4m(typ.) @VGS = 10VRDS(ON)= 2.8m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

 9.2. Size:911K  hymexa
 hy1804p hy1804b.pdf

HY1808AP HY1808AP

HY1804P/B N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/110ARDS(ON)= 3.6m(typ.)@VGS = 10VRDS(ON)= 4.4m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and RuggedSGD Lead Free and Green Devices Available(RoHS Compliant)GDSTO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DCN-Channel MO

 9.3. Size:1499K  hymexa
 hy1804d hy1804v.pdf

HY1808AP HY1808AP

HY1804D/UN-Channel Enhancement Mode MOSFETFeaturesPin Description 40V/80A,RDS(ON)=4.0 m(typ.) @ VGS=10VRDS(ON)=4.6 m(typ.) @ VGS=4.5 VSSD SD S Avalanche RatedG D G DG G Reliable and RuggedSSD DG Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Switching Application Pow

 9.4. Size:1648K  hymexa
 hy1803c2.pdf

HY1808AP HY1808AP

HY1803C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/80AD D D D D D D DRDS(ON)= 2.4m(typ.) @VGS = 10VRDS(ON)= 2.8m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SUM90N08-4M8P

 

 
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