MDP1991 Todos los transistores

 ..1. Size:1152K  1
 mdp1991.pdf

MDP1991 Single N-channel Trench MOSFET 100V, 120A, 5.9m General Description Features The MDP1991 uses advanced Magnachip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1991 is suitable device for DC/DC Converter

 9.1. Size:1072K  magnachip
 mdp1921th.pdf

MDP1921 Single N-channel Trench MOSFET 100V, 120A, 4.5m General Description Features The MDP1921 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1921 is suitable device for DC/DC Converter

 9.2. Size:899K  magnachip
 mdp1922th.pdf

MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4m General Description Features The MDP1922 uses advanced MagnaChip s MOSFET VDS = 100V Technology, which provides high performance in on-state I = 97A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1922 is suitable device for DC/DC Converter

 9.3. Size:834K  magnachip
 mdp1901th.pdf

MDP1901 Single N-channel Trench MOSFET 100V, 36A, 22m General Description Features The MDP1901 uses advanced MagnaChip s MOSFET VDS = 100V Technology, which provides high performance in on-state I = 36A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1901 is suitable device for DC/DC Converters

 9.4. Size:985K  magnachip
 mdp1932th.pdf

MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m General Description Features The MDP1932 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1932 is suitable device for Synchronous

 9.5. Size:1058K  magnachip
 mdp1933th.pdf

MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0m General Description Features The MDP1933 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 105A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1933 is suitable device for Synchronous

 9.6. Size:1085K  magnachip
 mdp1930th.pdf

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5m General Description Features The MDP1930 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1930 is suitable device for Synchronous

 9.7. Size:1004K  magnachip
 mdp1923th.pdf

MDP1923 Single N-channel Trench MOSFET 100V, 69A, 13.9m General Description Features The MDP1923 uses advanced MagnaChip s MOSFET VDS = 100V Technology, which provides high performance in on-state I = 69A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1923 is suitable device for Synchronous

 9.8. Size:288K  inchange semiconductor
 mdp1921th.pdf

isc N-Channel MOSFET Transistor MDP1921TH FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.9. Size:245K  inchange semiconductor
 mdp1922.pdf

isc N-Channel MOSFET Transistor MDP1922 FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be suitable for DC/DC converters and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 9.10. Size:206K  inchange semiconductor
 mdp1922th.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDP1922TH FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM

 9.11. Size:288K  inchange semiconductor
 mdp1901th.pdf

isc N-Channel MOSFET Transistor MDP1901TH FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.12. Size:206K  inchange semiconductor
 mdp1921.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDP1921 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications For DC-DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 9.13. Size:288K  inchange semiconductor
 mdp1933th.pdf

isc N-Channel MOSFET Transistor MDP1933TH FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.14. Size:206K  inchange semiconductor
 mdp1923th.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDP1923TH FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate