MDP1991
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDP1991
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 223
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 100
nC
trⓘ - Rise Time: 28.8
nS
Cossⓘ -
Output Capacitance: 1300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059
Ohm
Package:
TO-220
MDP1991
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDP1991
Datasheet (PDF)
..1. Size:1152K 1
mdp1991.pdf 
MDP1991 Single N-channel Trench MOSFET 100V, 120A, 5.9m General Description Features The MDP1991 uses advanced Magnachips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1991 is suitable device for DC/DC Converter
9.1. Size:1072K magnachip
mdp1921th.pdf
MDP1921 Single N-channel Trench MOSFET 100V, 120A, 4.5m General Description Features The MDP1921 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1921 is suitable device for DC/DC Converter
9.2. Size:899K magnachip
mdp1922th.pdf
MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4m General Description Features The MDP1922 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 97A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1922 is suitable device for DC/DC Converter
9.3. Size:834K magnachip
mdp1901th.pdf
MDP1901 Single N-channel Trench MOSFET 100V, 36A, 22m General Description Features The MDP1901 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 36A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1901 is suitable device for DC/DC Converters
9.4. Size:985K magnachip
mdp1932th.pdf
MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m General Description Features The MDP1932 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1932 is suitable device for Synchronous
9.5. Size:1058K magnachip
mdp1933th.pdf
MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0m General Description Features The MDP1933 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 105A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1933 is suitable device for Synchronous
9.6. Size:1085K magnachip
mdp1930th.pdf
MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5m General Description Features The MDP1930 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1930 is suitable device for Synchronous
9.7. Size:1004K magnachip
mdp1923th.pdf
MDP1923 Single N-channel Trench MOSFET 100V, 69A, 13.9m General Description Features The MDP1923 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 69A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1923 is suitable device for Synchronous
9.8. Size:288K inchange semiconductor
mdp1921th.pdf
isc N-Channel MOSFET Transistor MDP1921THFEATURESDrain Current : I = 120A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
9.9. Size:245K inchange semiconductor
mdp1922.pdf
isc N-Channel MOSFET Transistor MDP1922FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for DC/DC converters and general purposeapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
9.10. Size:206K inchange semiconductor
mdp1922th.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1922THFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM
9.11. Size:288K inchange semiconductor
mdp1901th.pdf
isc N-Channel MOSFET Transistor MDP1901THFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
9.12. Size:206K inchange semiconductor
mdp1921.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1921FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
9.13. Size:288K inchange semiconductor
mdp1933th.pdf
isc N-Channel MOSFET Transistor MDP1933THFEATURESDrain Current : I = 105A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
9.14. Size:206K inchange semiconductor
mdp1923th.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP1923THFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate
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