NCE8580 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE8580
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 170 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 343 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de NCE8580 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE8580 datasheet
nce8580.pdf
Pb Free Product http //www.ncepower.com NCE8580 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =85V,ID =80A Schematic diagram RDS(ON)
nce85h25t.pdf
http //www.ncepower.com NCE85H25T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)
nce85h21.pdf
Pb Free Product http //www.ncepower.com NCE85H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Note5 Schematic diagram RDS(ON)
nce85h21c.pdf
Pb Free Product http //www.ncepower.com NCE85H21C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)
Otros transistores... HYG055N08NS1P , HYG055N08NS1B , HY1808AP , HY1808AM , HY1808AB , HY1808APS , HY1808APM , MDP1991 , AO4407 , SRC60R090B , AONY36352 , HM25P06D , AP3N9R5H , EMB04N03H , HY3215W , KPS8N65F , QN3107M6N .
History: HM100N15 | BSB024N03LXG | BSB028N06NN3G
History: HM100N15 | BSB024N03LXG | BSB028N06NN3G
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