NCE8580 Datasheet and Replacement
Type Designator: NCE8580
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 343 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-220
NCE8580 substitution
NCE8580 Datasheet (PDF)
nce8580.pdf

Pb Free Producthttp://www.ncepower.com NCE8580NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =85V,ID =80A Schematic diagram RDS(ON)
nce85h25t.pdf

http://www.ncepower.com NCE85H25TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)
nce85h21.pdf

Pb Free Producthttp://www.ncepower.com NCE85H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210ANote5 Schematic diagram RDS(ON)
nce85h21c.pdf

Pb Free Producthttp://www.ncepower.com NCE85H21CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)
Datasheet: HYG055N08NS1P , HYG055N08NS1B , HY1808AP , HY1808AM , HY1808AB , HY1808APS , HY1808APM , MDP1991 , P60NF06 , SRC60R090B , AONY36352 , HM25P06D , AP3N9R5H , EMB04N03H , HY3215W , KPS8N65F , QN3107M6N .
History: STD10NF10 | NP90N055NUK | IPI057N08N3G | KI5441DC | PX5S6JZ | IRHN7C50SE | 2SK979
Keywords - NCE8580 MOSFET datasheet
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History: STD10NF10 | NP90N055NUK | IPI057N08N3G | KI5441DC | PX5S6JZ | IRHN7C50SE | 2SK979



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