SRC60R090B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC60R090B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 300 W
Tensión drenaje-fuente |Vds|: 600 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 39.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4.5 V
Carga de compuerta (Qg): 90.3 nC
Tiempo de elevación (tr): 38 nS
Conductancia de drenaje-sustrato (Cd): 136 pF
Resistencia drenaje-fuente RDS(on): 0.09 Ohm
Paquete / Caja (carcasa): TO247 TO220F
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SRC60R090B Datasheet (PDF)
..1. src60r090b.pdf Size:643K _1
Datasheet 90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090B General Description Symbol The Sanrise SRC60R090B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.1. src60r078b.pdf Size:1038K _1
Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , IRFP250N , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .



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