SRC60R090B. Аналоги и основные параметры
Наименование производителя: SRC60R090B
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 39.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 136 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: TO247
TO220F
Аналог (замена) для SRC60R090B
- подборⓘ MOSFET транзистора по параметрам
SRC60R090B даташит
..1. Size:643K 1
src60r090b.pdf 

Datasheet 90m , 600V, Super Junction N-Channel Power MOSFET SRC60R090B General Description Symbol The Sanrise SRC60R090B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
0.1. Size:1771K sanrise-tech
src60r090bs.pdf 

Datasheet 90m , 600V, Super Junction N-Channel Power MOSFET SRC60R090BS General Description Symbol The Sanrise SRC60R090BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
7.1. Size:1038K 1
src60r078b.pdf 

Datasheet 78m , 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.2. Size:619K sanrise-tech
src60r075bs.pdf 

Preliminary Datasheet 75m , 600V, Super Junction N-Channel Power MOSFET SRC60R075BS General Description Symbol The Sanrise SRC60R075BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior pow
7.3. Size:1266K sanrise-tech
src60r064s.pdf 

Preliminary Datasheet 64m , 600V, Super Junction N-Channel Power MOSFET SRC60R064S General Description Symbol The Sanrise SRC60R064S is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.4. Size:1606K sanrise-tech
src60r030fbs.pdf 

Datasheet 30m , 600V, Super Junction N-Channel Power MOSFET SRC60R030FBS General Description Symbol The Sanrise SRC60R030FBS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power densi
7.5. Size:1038K sanrise-tech
src60r078b.pdf 

Datasheet 78m , 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.6. Size:1146K sanrise-tech
src60r075bsd88.pdf 

Datasheet 75m , 600V, Super Junction N-Channel Power MOSFET SRC60R075BS General Description Symbol The Sanrise SRC60R075BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
7.7. Size:1755K sanrise-tech
src60r068bs.pdf 

Datasheet 68m , 600V, Super Junction N-Channel Power MOSFET SRC60R068BS General Description Symbol The Sanrise SRC60R068BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
7.8. Size:1572K sanrise-tech
src60r075fbs.pdf 

Datasheet 75m , 600V, Super Junction N-Channel Power MOSFET SRC60R075FBS General Description Symbol The Sanrise SRC60R075FBS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power densit
7.9. Size:1103K sanrise-tech
src60r068bstl.pdf 

Datasheet 68m , 600V, Super Junction N-Channel Power MOSFET SRC60R068BS General Description Symbol The Sanrise SRC60R068BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
7.10. Size:1422K sanrise-tech
src60r017fb.pdf 

Datasheet 17m , 600V, Super Junction N-Channel Power MOSFET SRC60R017FB General Description Symbol The Sanrise SRC60R017FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
7.11. Size:909K sanrise-tech
src60r045fb.pdf 

Datasheet 45m 600V, Super Junction N-Channel Power MOSFET SRC60R045FB General Description Symbol The Sanrise SRC60R045FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.12. Size:1180K sanrise-tech
src60r037b.pdf 

Datasheet 37m , 600V, Super Junction N-Channel Power MOSFET SRC60R037B General Description Symbol The Sanrise SRC60R037B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an
7.13. Size:696K sanrise-tech
src60r030bs.pdf 

Datasheet 30m , 600V, Super Junction N-Channel Power MOSFET SRC60R030BS General Description Symbol The Sanrise SRC60R030BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.14. Size:1172K sanrise-tech
src60r022fbst4g.pdf 

Datasheet 22m , 600V, Super Junction N-Channel Power MOSFET SRC60R022FBS General Description Symbol The Sanrise SRC60R022FBS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power densit
7.15. Size:1263K sanrise-tech
src60r022fbs.pdf 

Datasheet 22m , 600V, Super Junction N-Channel Power MOSFET SRC60R022FBS General Description Symbol The Sanrise SRC60R022FBS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power densit
7.16. Size:1904K sanrise-tech
src60r029fbs.pdf 

Datasheet 29m , 600V, Super Junction N-Channel Power MOSFET SRC60R029FBS General Description Symbol The Sanrise SRC60R029FBS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power densit
7.17. Size:1326K sanrise-tech
src60r017fbt4g.pdf 

Datasheet 17m , 600V, Super Junction N-Channel Power MOSFET SRC60R017FB General Description Symbol The Sanrise SRC60R017FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
7.18. Size:1771K sanrise-tech
src60r078bs.pdf 

Datasheet 78m , 600V, Super Junction N-Channel Power MOSFET SRC60R078BS General Description Symbol The Sanrise SRC60R078BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
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