HY3215W Todos los transistores

 

HY3215W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY3215W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 349 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO247

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HY3215W datasheet

 ..1. Size:1565K  1
 hy3215w.pdf pdf_icon

HY3215W

HY3215W N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/130A RDS(ON)=11.5m (typ.)@VGS =10V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available S (RoHS Compliant) D G TO-247A-3L Applications Brushless Motor Drive Electric Power Steering N Channel MOSFET Ordering and Marking Information Package Code W W T

 8.1. Size:968K  hymexa
 hy3215p hy3215m hy3215b hy3215ps hy3215pm.pdf pdf_icon

HY3215W

HY3215P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description F eatures 150V/120A RDS(ON)= 12 m (typ.) @ VGS=10V S D G S D 100% avalanche tested G S D G Reliable and Rugged TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications TO-3PS-3L TO-3PM-3S A Switching application

 9.1. Size:4740K  1
 hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3215W

HY3210P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description F eatures 100V/120A RDS(ON)= 6.8 m (typ.) @ VGS=10V S D S 100% avalanche tested D G G S D Reliable and Rugged G TO-220FB-3L TO-220FB-3M TO-220FB-3L TO-220FB-3M TO-263-2L TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications A TO-3PS-3L TO-3PS-3M TO-3PS-

 9.2. Size:4740K  hymexa
 hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3215W

HY3210P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description F eatures 100V/120A RDS(ON)= 6.8 m (typ.) @ VGS=10V S D S 100% avalanche tested D G G S D Reliable and Rugged G TO-220FB-3L TO-220FB-3M TO-220FB-3L TO-220FB-3M TO-263-2L TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications A TO-3PS-3L TO-3PS-3M TO-3PS-

MOSTRAR MÁS

Otros transistores... HY1808APM , MDP1991 , NCE8580 , SRC60R090B , AONY36352 , HM25P06D , AP3N9R5H , EMB04N03H , 10N65 , KPS8N65F , QN3107M6N , S70N08R , S70N08S , S70N08RN , S70N08RP , STP200N3LL , BSS84KR .

 

 

 

 

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