QN3107M6N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QN3107M6N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 44.6 nS
Cossⓘ - Capacitancia de salida: 1086 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: PRPAK5X6
Búsqueda de reemplazo de QN3107M6N MOSFET
QN3107M6N datasheet
qn3107m6n.pdf
QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet
qn3103m6n.pdf
QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet
qn3109m6n.pdf
QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee
Otros transistores... NCE8580 , SRC60R090B , AONY36352 , HM25P06D , AP3N9R5H , EMB04N03H , HY3215W , KPS8N65F , RFP50N06 , S70N08R , S70N08S , S70N08RN , S70N08RP , STP200N3LL , BSS84KR , HM0565 , HM100N02 .
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