QN3107M6N Specs and Replacement
Type Designator: QN3107M6N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 44.6 nS
Cossⓘ - Output Capacitance: 1086 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: PRPAK5X6
QN3107M6N substitution
- MOSFET ⓘ Cross-Reference Search
QN3107M6N datasheet
qn3107m6n.pdf
QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet... See More ⇒
qn3103m6n.pdf
QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet ... See More ⇒
qn3109m6n.pdf
QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee... See More ⇒
Detailed specifications: NCE8580, SRC60R090B, AONY36352, HM25P06D, AP3N9R5H, EMB04N03H, HY3215W, KPS8N65F, RFP50N06, S70N08R, S70N08S, S70N08RN, S70N08RP, STP200N3LL, BSS84KR, HM0565, HM100N02
Keywords - QN3107M6N MOSFET specs
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