QN3107M6N PDF and Equivalents Search

 

QN3107M6N Specs and Replacement

Type Designator: QN3107M6N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44.6 nS

Cossⓘ - Output Capacitance: 1086 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: PRPAK5X6

QN3107M6N substitution

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QN3107M6N datasheet

 ..1. Size:312K  1
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QN3107M6N

QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet... See More ⇒

 9.1. Size:312K  1
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QN3107M6N

QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet ... See More ⇒

 9.2. Size:259K  1
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QN3107M6N

QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25 ) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee... See More ⇒

Detailed specifications: NCE8580, SRC60R090B, AONY36352, HM25P06D, AP3N9R5H, EMB04N03H, HY3215W, KPS8N65F, RFP50N06, S70N08R, S70N08S, S70N08RN, S70N08RP, STP200N3LL, BSS84KR, HM0565, HM100N02

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