All MOSFET. QN3107M6N Datasheet

 

QN3107M6N Datasheet and Replacement


   Type Designator: QN3107M6N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44.6 nS
   Cossⓘ - Output Capacitance: 1086 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: PRPAK5X6
 

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QN3107M6N Datasheet (PDF)

 ..1. Size:312K  1
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QN3107M6N

QN3107M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3107M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 2.6m 110A and gate charge for most of the synchronous buck converter applications . Applications The QN3107M6N meet

 9.1. Size:312K  1
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QN3107M6N

QN3103M6N N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3103M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density , which provide excellent RDSON 30V 6.3m 68A and gate charge for most of the synchronous buck converter applications . Applications The QN3103M6N meet

 9.2. Size:259K  1
 qn3109m6n.pdf pdf_icon

QN3107M6N

QN3109M6NN N-Channel 30V Fast Switching MOSFET General Description Product Summary The QN3109M6N is the highest performance RDSON ID BVDSS trench N-Channel MOSFET with extreme high (VGS=10V) (TC=25) cell density, which provide excellent RDSON 30V 1.5m 154A and gate charge for most of the synchronous buck converter applications . Applications The QN3109M6N mee

Datasheet: NCE8580 , SRC60R090B , AONY36352 , HM25P06D , AP3N9R5H , EMB04N03H , HY3215W , KPS8N65F , SKD502T , S70N08R , S70N08S , S70N08RN , S70N08RP , STP200N3LL , BSS84KR , HM0565 , HM100N02 .

Keywords - QN3107M6N MOSFET datasheet

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