HM1404 Todos los transistores

 

HM1404 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM1404
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 260 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 170 nC
   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET HM1404

 

HM1404 Datasheet (PDF)

 ..1. Size:471K  cn hmsemi
hm1404.pdf

HM1404
HM1404

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)

 0.1. Size:783K  cn hmsemi
hm1404b.pdf

HM1404
HM1404

40VDS20VGS130A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=40VVGSS=20VID=130A RDS(ON)=4m(max.)@VGS=10V High Dense Cell Design Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Power Management in

 0.2. Size:501K  cn hmsemi
hm1404c.pdf

HM1404
HM1404

HM1404CN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =170A RDS(ON)

 0.3. Size:609K  cn hmsemi
hm1404d.pdf

HM1404
HM1404

HM1404DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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