HM1404 Todos los transistores

 

HM1404 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM1404
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 260 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 200 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 170 nC
   Tiempo de subida (tr): 37 nS
   Conductancia de drenaje-sustrato (Cd): 880 pF
   Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET HM1404

 

HM1404 Datasheet (PDF)

 ..1. Size:471K  cn hmsemi
hm1404.pdf

HM1404
HM1404

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)

 0.1. Size:783K  cn hmsemi
hm1404b.pdf

HM1404
HM1404

40VDS20VGS130A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=40VVGSS=20VID=130A RDS(ON)=4m(max.)@VGS=10V High Dense Cell Design Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Power Management in

 0.2. Size:501K  cn hmsemi
hm1404c.pdf

HM1404
HM1404

HM1404CN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =170A RDS(ON)

 0.3. Size:609K  cn hmsemi
hm1404d.pdf

HM1404
HM1404

HM1404DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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