HM1404 Datasheet and Replacement. Cross Reference Search

HM1404 Datasheet (PDF)

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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)

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40VDS20VGS130A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=40VVGSS=20VID=130A RDS(ON)=4m(max.)@VGS=10V High Dense Cell Design Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Power Management in

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HM1404CN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =170A RDS(ON)

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HM1404DN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)

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