HM150N03 Todos los transistores

 

HM150N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM150N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 1135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220
 

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HM150N03 Datasheet (PDF)

 ..1. Size:929K  cn hmsemi
 hm150n03.pdf pdf_icon

HM150N03

HM150N03 N-Channel Enhancement Mode Power MOSFET Description The HM150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 0.1. Size:837K  cn hmsemi
 hm150n03d.pdf pdf_icon

HM150N03

HM150N03 N-Channel Enhancement Mode Power MOSFET Description The 15 D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 0.2. Size:674K  cn hmsemi
 hm150n03k.pdf pdf_icon

HM150N03

HM150N03K N-Channel Enhancement Mode Power MOSFET Description The 15 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 9.1. Size:111K  chenmko
 chm1503yjgp.pdf pdf_icon

HM150N03

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM1503YJGPDual Enhancement Mode Field Effect TransistorN-channel Q1: VOLTAGE 30 Volts CURRENT 8 AmpereN-channel Q2: VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely

MOSTRAR MÁS

Otros transistores... HM13N50 , HM13N50F , HM13P10 , HM13P10K , HM1404 , HM1404B , HM1404C , HM1404D , IRFB4110 , HM150N03D , HM150N03K , HM15N02Q , HM15N10D , HM15N10K , HM15N50 , HM15N50F , HM15P10D .

History: P2003BDG

 

 
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