HM150N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM150N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 130 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 150 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 38 nC
Tiempo de subida (tr): 24 nS
Conductancia de drenaje-sustrato (Cd): 1135 pF
Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET HM150N03
HM150N03 Datasheet (PDF)
hm150n03.pdf
HM150N03 N-Channel Enhancement Mode Power MOSFET Description The HM150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
hm150n03d.pdf
HM150N03 N-Channel Enhancement Mode Power MOSFET Description The 15 D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
hm150n03k.pdf
HM150N03K N-Channel Enhancement Mode Power MOSFET Description The 15 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
chm1503yjgp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM1503YJGPDual Enhancement Mode Field Effect TransistorN-channel Q1: VOLTAGE 30 Volts CURRENT 8 AmpereN-channel Q2: VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely
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