HM150N03 Datasheet and Replacement
Type Designator: HM150N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 1135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
HM150N03 substitution
HM150N03 Datasheet (PDF)
hm150n03.pdf

HM150N03 N-Channel Enhancement Mode Power MOSFET Description The HM150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
hm150n03d.pdf

HM150N03 N-Channel Enhancement Mode Power MOSFET Description The 15 D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
hm150n03k.pdf

HM150N03K N-Channel Enhancement Mode Power MOSFET Description The 15 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)
chm1503yjgp.pdf

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM1503YJGPDual Enhancement Mode Field Effect TransistorN-channel Q1: VOLTAGE 30 Volts CURRENT 8 AmpereN-channel Q2: VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely
Datasheet: HM13N50 , HM13N50F , HM13P10 , HM13P10K , HM1404 , HM1404B , HM1404C , HM1404D , IRFB4110 , HM150N03D , HM150N03K , HM15N02Q , HM15N10D , HM15N10K , HM15N50 , HM15N50F , HM15P10D .
Keywords - HM150N03 MOSFET datasheet
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