HM15N02Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM15N02Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 9.2 nS
   Cossⓘ - Capacitancia de salida: 162 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: DFN3X3

Búsqueda de reemplazo de MOSFET HM15N02Q

HM15N02Q Datasheet (PDF)

..1. Size:629K cn hmsemi
hm15n02q.pdf

HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =15A RDS(ON)

9.1. Size:276K philips
phm15nq20t.pdf

PHM15NQ20TTrenchMOS standard level FETRev. 03 11 September 2003 Product dataM3D8791. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mounted package Low profile.1.3 Applications DC-to-DC primary side Porta

9.2. Size:779K cn hmsemi
hm15n10d.pdf

HM15N10D N-Channel Enhancement Mode Power MOSFET Description The HM15N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =15A RDS(ON)

9.3. Size:500K cn hmsemi
hm15n50 hm15n50f.pdf

HM15N50/HM15N50FHM15N50/HM15N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 15.0A, 500V, RDS(on) = 0.42 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 45nC)This advanced technology has been espe cially tailored to Fast s witchingminimize o n-state r esistance, pr ovide superior switc

9.4. Size:346K cn hmsemi
hm15n120a.pdf

IGBT Features 1200V,15A VCE(sat)(typ.)=2.6V@VGE=15VIC=15A High speed switching Higher system efficiency Soft current turn-off waveforms General Description IGBTs offer lower losses and higher energy efficiency H&M for application such as IH (induction heating),UPS, General inverter and other soft switching applications. Absolute

9.5. Size:553K cn hmsemi
hm15n10k.pdf

HM15N10KN-Channel Enhancement Mode Power MOSFET Description The HM15N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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