HM1N60PR Todos los transistores

 

HM1N60PR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM1N60PR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 10.5 Ohm

Encapsulados: SOT89

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HM1N60PR datasheet

 ..1. Size:1252K  cn hmsemi
 hm1n60pr.pdf pdf_icon

HM1N60PR

Silicon N-Channel Power MOSFET HM1N60 General Description VDSS 600 V HM1N60PR, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circu

 8.1. Size:741K  cn hmsemi
 hm1n60r.pdf pdf_icon

HM1N60PR

Silicon N-Channel Power MOSFET HM1N60R General Description VDSS 600 V HM1N60R, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit fo

 8.2. Size:727K  cn hmsemi
 hm1n60.pdf pdf_icon

HM1N60PR

N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package 0.5 A TO-92 ID 1.0 A IPAK/DPKA VDSS 600 V Rdson Vgs=10V 15 Qg 6.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge FEATU

Otros transistores... HM18N40F , HM18N50A , HM18N50F , HM18P10 , HM18P10K , HM19N40 , HM1N50MR , HM1N60 , STP80NF70 , HM1N60R , HM1P10MR , HM1P15MR , HM1P15PR , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA .

 

 

 

 

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