All MOSFET. HM1N60PR Datasheet

 

HM1N60PR Datasheet and Replacement


   Type Designator: HM1N60PR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: SOT89
 

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HM1N60PR Datasheet (PDF)

 ..1. Size:1252K  cn hmsemi
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HM1N60PR

Silicon N-Channel Power MOSFET HM1N60 General Description VDSS 600 VHM1N60PR, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circu

 8.1. Size:741K  cn hmsemi
hm1n60r.pdf pdf_icon

HM1N60PR

Silicon N-Channel Power MOSFET HM1N60RGeneral Description VDSS 600 VHM1N60R, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit fo

 8.2. Size:727K  cn hmsemi
hm1n60.pdf pdf_icon

HM1N60PR

N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package 0.5 A TO-92 ID 1.0 A IPAK/DPKAVDSS 600 V RdsonVgs=10V 15 Qg 6.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballastsbased on half bridge FEATU

Datasheet: HM18N40F , HM18N50A , HM18N50F , HM18P10 , HM18P10K , HM19N40 , HM1N50MR , HM1N60 , 20N50 , HM1N60R , HM1P10MR , HM1P15MR , HM1P15PR , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA .

History: SM6008NF | DH045N06E | 2SK1813 | HAT2174N | AP60SL600AIN

Keywords - HM1N60PR MOSFET datasheet

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