HM20N06KA Todos los transistores

 

HM20N06KA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM20N06KA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 20 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 25 nC
   Tiempo de subida (tr): 2.6 nS
   Conductancia de drenaje-sustrato (Cd): 60 pF
   Resistencia entre drenaje y fuente RDS(on): 0.035 Ohm
   Paquete / Cubierta: TO252

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HM20N06KA Datasheet (PDF)

 ..1. Size:544K  cn hmsemi
hm20n06ka.pdf

HM20N06KA HM20N06KA

HM20N06KAN-Channel Enhancement Mode Power MOSFET Description The HM20N06KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 7.1. Size:97K  chenmko
chm20n06pagp.pdf

HM20N06KA HM20N06KA

CHENMKO ENTERPRISE CO.,LTDCHM20N06PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 7.2. Size:655K  cn hmsemi
hm20n06.pdf

HM20N06KA HM20N06KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 7.3. Size:565K  cn hmsemi
hm20n06ia.pdf

HM20N06KA HM20N06KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A Schematic diagram RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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