HM20N60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM20N60  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 200 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO220AB

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HM20N60 datasheet

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HM20N60

20N60 VDSS 600 V General Description ID 20 A HM20N60, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 0.1. Size:733K  jiaensemi
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HM20N60

JFHM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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HM20N60

JFHM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.3. Size:526K  cn hmsemi
 hm20n60a.pdf pdf_icon

HM20N60

HM20N60A VDSS 600 V General Description ID 20 A HM20N60A, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiza

MOSTRAR MÁS

Otros transistores... HM20N06KA, HM20N15, HM20N15A, HM20N15D, HM20N15K, HM20N15KA, HM20N50A, HM20N50F, IRF2807, HM20N60A, HM20N60F, HM20N65F, HM20P02D, HM20P02Q, HM20PD05, HM2300B, HM2300C