HM20N60 MOSFET Datasheet: N-Ch, 600V, 20A. Full specification with pinout and replacement list

HM20N60 Specs and Replacement

Type Designator: HM20N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO220AB

HM20N60 substitution

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HM20N60 datasheet

..1. Size:810K cn hmsemi
hm20n60.pdf pdf_icon

20N60 VDSS 600 V General Description ID 20 A HM20N60, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati... See More ⇒

0.1. Size:733K jiaensemi
jfhm20n60e.pdf pdf_icon

JFHM20N60E 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒

0.2. Size:711K jiaensemi
jfhm20n60c.pdf pdf_icon

JFHM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒

0.3. Size:526K cn hmsemi
hm20n60a.pdf pdf_icon

HM20N60A VDSS 600 V General Description ID 20 A HM20N60A, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiza... See More ⇒