HM2302E Todos los transistores

 ..1. Size:806K  cn hmsemi
 hm2302e.pdf

HM2302E N-Channel Trench Power MOSFET General Description The HM2302E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Schematic Diagram Features VDS = 15V,ID =2.0A R

 8.1. Size:418K  cn hmsemi
 hm2302.pdf

HM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D 3 RDS(ON)

 8.2. Size:194K  cn hmsemi
 hm2302bwsr.pdf

Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 20 0.29@ VGS=4.5V 0.5 SOT-563 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage

 8.3. Size:484K  cn hmsemi
 hm2302kr.pdf

HM2302KR N-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2302KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D 3 RDS(ON)

 8.4. Size:880K  cn hmsemi
 hm2302f.pdf

HM2302F N-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.8A RDS(ON)

 8.5. Size:773K  cn hmsemi
 hm2302dr.pdf

GENERAL DESCRIPTION FEATURES The HM2302DR is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistan

 8.6. Size:522K  cn hmsemi
 hm2302a.pdf

 8.7. Size:369K  cn hmsemi
 hm2302bwkr.pdf

HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The HM2302BWKR uses advanced trench technology to VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) excellent RDS(ON), low gate charge and operation voltages as low as 1.8V, in the small SOT363 RDS(ON)

 8.8. Size:1397K  cn hmsemi
 hm2302bjr.pdf

J HM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m @ 4.5V 20V 450m @2.5V 0.75A 800m @1.8V 1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Manage

 8.9. Size:648K  cn hmsemi
 hm2302b.pdf

HM2302B N-Channel Enhancement Mode Power MOSFET Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.5A RDS(ON)

 8.10. Size:1017K  cn hmsemi
 hm2302d.pdf

GENERAL DESCRIPTION FEATURES The HM2302D is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistance