HM2302E - описание и поиск аналогов

HM2302E N-Channel Trench Power MOSFET General Description The HM2302E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Schematic Diagram Features VDS = 15V,ID =2.0A R

HM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D 3 RDS(ON)

Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 20 0.29@ VGS=4.5V 0.5 SOT-563 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage

HM2302KR N-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2302KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D 3 RDS(ON)

HM2302F N-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.8A RDS(ON)

GENERAL DESCRIPTION FEATURES The HM2302DR is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistan

HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The HM2302BWKR uses advanced trench technology to VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) excellent RDS(ON), low gate charge and operation voltages as low as 1.8V, in the small SOT363 RDS(ON)

J HM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m @ 4.5V 20V 450m @2.5V 0.75A 800m @1.8V 1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Manage

HM2302B N-Channel Enhancement Mode Power MOSFET Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.5A RDS(ON)

GENERAL DESCRIPTION FEATURES The HM2302D is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistance