HM2309APR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM2309APR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT89

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HM2309APR datasheet

 ..1. Size:593K  cn hmsemi
 hm2309apr.pdf pdf_icon

HM2309APR

HM2309APR P-Channel Enhancement Mode Power MOSFET Description The HM2309APR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)

 7.1. Size:465K  cn hmsemi
 hm2309al.pdf pdf_icon

HM2309APR

HM2309AL H&M Semi P-Channel Enhancement Mode Power MOSFET Description The HM2309AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4.6A RDS(ON)

 8.1. Size:873K  cn hmsemi
 hm2309.pdf pdf_icon

HM2309APR

HM2309 P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 215m @VGS=-10V The HM2309 is the P-Channel logic enhancement mode power RDS(ON) 260m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Ex

 8.2. Size:1022K  cn hmsemi
 hm2309b.pdf pdf_icon

HM2309APR

HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 188m @VGS=-10V The HM2309B is the P-Channel logic enhancement mode power RDS(ON) 266m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

MOSTRAR MÁS

Otros transistores... HM2302F, HM2302KR, HM2305, HM2305B, HM2305D, HM2306, HM2309, HM2309AL, IRF1404, HM2309B, HM2309C, HM2309D, HM2309DR, HM2310B, HM2310C, HM2312, HM2312B