HM2341B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HM2341B Datasheet (PDF)

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HM2341B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

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HM2341 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

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CHENMKO ENTERPRISE CO.,LTDCHM2346ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 60 Volts CURRENT 2.9 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON).* Rugged and reliable.(2)* High satu

9.2. Size:87K chenmko
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CHENMKO ENTERPRISE CO.,LTDCHM2342GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

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