HM2341B MOSFET. Datasheet pdf. Equivalent
Type Designator: HM2341B
Marking Code: 2341
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 4.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.5 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
HM2341B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM2341B Datasheet (PDF)
hm2341b.pdf
HM2341B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
hm2341.pdf
HM2341 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)
chm2346esgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2346ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 60 Volts CURRENT 2.9 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON).* Rugged and reliable.(2)* High satu
chm2342gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM2342GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 4.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: P1070ATF
History: P1070ATF
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