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HM24N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM24N50A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 320 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 25 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 96 nC
   Tiempo de subida (tr): 80.5 nS
   Conductancia de drenaje-sustrato (Cd): 440 pF
   Resistencia entre drenaje y fuente RDS(on): 0.2 Ohm
   Paquete / Cubierta: TO3P

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HM24N50A Datasheet (PDF)

 ..1. Size:2593K  cn hmsemi
hm24n50a.pdf

HM24N50A
HM24N50A

HM24N50A500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 25A, 500V, RDS(on)typ. = 167m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 96nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance

 9.1. Size:596K  cn hmsemi
hm24n20ka.pdf

HM24N50A
HM24N50A

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 9.2. Size:520K  cn hmsemi
hm24n20k.pdf

HM24N50A
HM24N50A

HM24N20K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)

 9.3. Size:649K  cn hmsemi
hm24n20.pdf

HM24N50A
HM24N50A

HM24N20 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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