HM24N50A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM24N50A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 320 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80.5 nS
Cossⓘ - Capacitancia de salida: 440 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de HM24N50A MOSFET
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HM24N50A datasheet
hm24n50a.pdf
HM24N50A 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 25A, 500V, RDS(on)typ. = 167m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 96nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance
hm24n20ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
hm24n20k.pdf
HM24N20K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)
hm24n20.pdf
HM24N20 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)
Otros transistores... HM2328, HM2333, HM2341, HM2341B, HM2369, HM24N20, HM24N20K, HM24N20KA, IRLB4132, HM25N03D, HM25N03Q, HM25N06D, HM25N06Q, HM25N08D, HM25N50, HM25P03D, HM25P03K
History: NCE70N1K4F
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