HM24N50A Todos los transistores

 

HM24N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM24N50A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 320 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80.5 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO3P
 

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HM24N50A Datasheet (PDF)

 ..1. Size:2593K  cn hmsemi
 hm24n50a.pdf pdf_icon

HM24N50A

HM24N50A500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 25A, 500V, RDS(on)typ. = 167m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 96nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance

 9.1. Size:596K  cn hmsemi
 hm24n20ka.pdf pdf_icon

HM24N50A

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

 9.2. Size:520K  cn hmsemi
 hm24n20k.pdf pdf_icon

HM24N50A

HM24N20K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)

 9.3. Size:649K  cn hmsemi
 hm24n20.pdf pdf_icon

HM24N50A

HM24N20 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM24N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID =24A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM2328 , HM2333 , HM2341 , HM2341B , HM2369 , HM24N20 , HM24N20K , HM24N20KA , IRLB4132 , HM25N03D , HM25N03Q , HM25N06D , HM25N06Q , HM25N08D , HM25N50 , HM25P03D , HM25P03K .

 

 
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