HM25N06D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM25N06D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.3 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: DFN5X6-8L

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HM25N06D datasheet

 ..1. Size:462K  cn hmsemi
 hm25n06d.pdf pdf_icon

HM25N06D

HM25N06D Description The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 7.1. Size:674K  cn hmsemi
 hm25n06q.pdf pdf_icon

HM25N06D

HM25N06Q Description The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 8.1. Size:583K  cn hmsemi
 hm25n03d.pdf pdf_icon

HM25N06D

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 8.2. Size:835K  cn hmsemi
 hm25n08d.pdf pdf_icon

HM25N06D

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM2341B, HM2369, HM24N20, HM24N20K, HM24N20KA, HM24N50A, HM25N03D, HM25N03Q, IRFP260, HM25N06Q, HM25N08D, HM25N50, HM25P03D, HM25P03K, HM25P03Q, HM25P04D, HM25P04K