HM25N06D Specs and Replacement
Type Designator: HM25N06D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.3 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN5X6-8L
HM25N06D substitution
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HM25N06D datasheet
hm25n06d.pdf
HM25N06D Description The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON) ... See More ⇒
hm25n06q.pdf
HM25N06Q Description The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON) ... See More ⇒
hm25n03d.pdf
HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON) ... See More ⇒
hm25n08d.pdf
HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON) ... See More ⇒
Detailed specifications: HM2341B, HM2369, HM24N20, HM24N20K, HM24N20KA, HM24N50A, HM25N03D, HM25N03Q, IRFP260, HM25N06Q, HM25N08D, HM25N50, HM25P03D, HM25P03K, HM25P03Q, HM25P04D, HM25P04K
Keywords - HM25N06D MOSFET specs
HM25N06D cross reference
HM25N06D equivalent finder
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HM25N06D substitution
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