HM25N06D Datasheet and Replacement
Type Designator: HM25N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.3 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN5X6-8L
HM25N06D substitution
HM25N06D Datasheet (PDF)
hm25n06d.pdf

HM25N06DDescription The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm25n06q.pdf

HM25N06QDescription The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm25n03d.pdf

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)
hm25n08d.pdf

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)
Datasheet: HM2341B , HM2369 , HM24N20 , HM24N20K , HM24N20KA , HM24N50A , HM25N03D , HM25N03Q , 8205A , HM25N06Q , HM25N08D , HM25N50 , HM25P03D , HM25P03K , HM25P03Q , HM25P04D , HM25P04K .
History: 2SK893 | NCV8408 | SI7846DP | SSM3K335R | APT47N60BCFG | 7N65G-TQ2-T | CS50N06P
Keywords - HM25N06D MOSFET datasheet
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History: 2SK893 | NCV8408 | SI7846DP | SSM3K335R | APT47N60BCFG | 7N65G-TQ2-T | CS50N06P



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