HM25P04D Todos los transistores

 ..1. Size:1222K  cn hmsemi
 hm25p04d.pdf

HM25P04D P-Channel Enhancement Mode Power MOSFET Description The HM25P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-25A RDS(ON)

 7.1. Size:969K  cn hmsemi
 hm25p04k.pdf

HM25P04K P-Channel Enhancement Mode Power MOSFET Description The HM25P04K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -25A Schematic diagram RDS(ON)

 8.1. Size:829K  1
 hm25p06d.pdf

HM25P06D P-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 8.2. Size:883K  cn vbsemi
 hm25p06k.pdf

HM25P06K www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Con

 8.3. Size:840K  cn hmsemi
 hm25p03k.pdf

HM25P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM25P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -25A D S RDS(ON)

 8.4. Size:829K  cn hmsemi
 hm25p06d.pdf

HM25P06D P-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 8.5. Size:563K  cn hmsemi
 hm25p03q.pdf

P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S D Schematic diagram RDS(ON)

 8.6. Size:1028K  cn hmsemi
 hm25p06k.pdf

HM25P06K P-Channel Enhancement Mode Power MOSFET Description The HM25P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 8.7. Size:554K  cn hmsemi
 hm25p03d.pdf

P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S D Schematic diagram RDS(ON)