HM25P04D
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM25P04D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 80
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 72
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 370
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
DFN5X6-8L
HM25P04D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM25P04D
Datasheet (PDF)
..1. Size:1222K cn hmsemi
hm25p04d.pdf 
HM25P04DP-Channel Enhancement Mode Power MOSFET Description The HM25P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-25A RDS(ON)
7.1. Size:969K cn hmsemi
hm25p04k.pdf
HM25P04KP-Channel Enhancement Mode Power MOSFET Description The HM25P04K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -25A Schematic diagram RDS(ON)
8.1. Size:829K 1
hm25p06d.pdf
HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)
8.2. Size:883K cn vbsemi
hm25p06k.pdf
HM25P06Kwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Con
8.3. Size:840K cn hmsemi
hm25p03k.pdf
HM25P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM25P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -25A D SRDS(ON)
8.4. Size:829K cn hmsemi
hm25p06d.pdf
HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)
8.5. Size:563K cn hmsemi
hm25p03q.pdf
P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S DSchematic diagram RDS(ON)
8.6. Size:1028K cn hmsemi
hm25p06k.pdf
HM25P06KP-Channel Enhancement Mode Power MOSFET Description The HM25P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)
8.7. Size:554K cn hmsemi
hm25p03d.pdf
P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S DSchematic diagram RDS(ON)
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