HM2807D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM2807D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: TO-263

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HM2807D datasheet

 ..1. Size:544K  cn hmsemi
 hm2807d.pdf pdf_icon

HM2807D

HM2807D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)

 8.1. Size:505K  cn hmsemi
 hm2807.pdf pdf_icon

HM2807D

HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)

 9.1. Size:1575K  cn hmsemi
 hm2809dr.pdf pdf_icon

HM2807D

 9.2. Size:1154K  cn hmsemi
 hm2800d.pdf pdf_icon

HM2807D

HM2800D N-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2 D1 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2 G1 S2 S1 General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O

MOSTRAR MÁS

Otros transistores... HM25P04K, HM25P15, HM25P15D, HM25P15K, HM26N18K, HM2800D, HM2803D, HM2807, STP80NF70, HM2809D, HM2809DR, HM2907, HM2N10, HM2N10B, HM2N10MR, HM2N15PR, HM2N15R